Millimeterwave INP DHBT power amplifier based on poweroptimized cascode configuration
نویسندگان
چکیده
This letter describes the use of a power-optimized cascode configuration for obtaining maximum output power at millimeter-wave (mm-wave) frequencies for a two-way combined power amplifier (PA). The PA has been fabricated in a high-speed InP double heterojunction bipolar transistor technology and has a total active emitter area of 68.4 lm2. The experimental results demonstrate a small signal gain of 9.8 dB and saturated output power of more than 18.6 dBm at 72 GHz with a peak power-added efficiency of 12%. The benefits of the power optimized cascode configuration over the standard cascode configuration at mm-wave frequencies are confirmed by both simulations and experimental results. VC 2013 Wiley Periodicals, Inc. Microwave Opt Technol Lett 55:1178–1182, 2013; View this article online at wileyonlinelibrary.com. DOI 10.1002/mop.27477
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تاریخ انتشار 2016